?2009 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH25N120FTDS rev. c0 FGH25N120FTDS 1200 v, 25 a field stop trench igbt april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. j unction temperature thermal characteristics symbol description ratings unit v ces collector to emitter voltage 1200 v v ges gate to emitter voltage 25 v i c collector current @ t c = 25 o c 50 a collector current @ t c = 100 o c 25 a i cm (1) pulsed collector current 75 a i f diode continuous forward current @ t c = 100 o c 25 a i fm diode maximum forward current 75 a p d maximum power dissipation @ t c = 25 o c 313 w maximum power dissipation @ t c = 100 o c 125 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case - 0.4 o c / w r jc (diode) thermal resistance, junction to case - 1.25 o c / w r ja thermal resistance, junction to ambient - 40 o c / w g e c to-247 g c e FGH25N120FTDS 1200 v, 25 a field stop trench igbt features ? high speed switching ? low saturation voltage: v ce(sat) = 1.60 v @ i c = 25 a ? high input impedance ? rohs compliant applications ? solar inverter, ups, welder, pfc general description using advanced field stop trench technology, fairch ild ? s 1200v trench igbts offer the optimum performance f or hard switching application such as solar inverter, ups, welder and pfc applications.
FGH25N120FTDS 1200 v, 25 a field stop trench igbt ?2009 fairchild semiconductor corporation 2 www.fairchildsemi.com FGH25N120FTDS rev. c0 package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package reel size tape width quant ity FGH25N120FTDS FGH25N120FTDS to-247 - - 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 1200 - - v i ces collector cut-off current v ce = v ces , v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 250 na on characteristics v ge(th) g-e threshold voltage i c = 25ma, v ce = v ge 3.5 6 7.5 v v ce(sat) collector to emitter saturation voltage i c = 25a , v ge = 15v - 1.6 2 v i c = 25a , v ge = 15v, t c = 125 o c - 1.92 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 4090 - pf c oes output capacitance - 135 - pf c res reverse transfer capacitance - 75 - pf switching characteristics t d(on) turn-on delay time v cc = 600v, i c = 25a, r g = 10 , v ge = 15v, inductive load, t c = 25 o c - 26 35 ns t r rise time - 41 53 ns t d(off) turn-off delay time - 151 196 ns t f fall time - 102 132 ns e on turn-on switching loss - 1.42 1.84 mj e off turn-off switching loss - 1.16 1.5 mj e ts total switching loss - 2.58 3.34 mj t d(on) turn-on delay time v cc = 600v, i c = 25a, r g = 10 , v ge = 15v, inductive load, t c = 125 o c - 22 - ns t r rise time - 41 - ns t d(off) turn-off delay time - 163 - ns t f fall time - 136 - ns e on turn-on switching loss - 2.04 - mj e off turn-off switching loss - 1.58 - mj e ts total switching loss - 3.62 - mj q g total gate charge v ce = 600v, i c = 25a, v ge = 15v - 169 225 nc q ge gate to emitter charge - 33 44 nc q gc gate to collector charge - 78 104 nc
FGH25N120FTDS 1200 v, 25 a field stop trench igbt ?2009 fairchild semiconductor corporation 3 www.fairchildsemi.com FGH25N120FTDS rev. c0 electrical characteristics of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 25a t c = 25 o c - 2.5 3.5 v t c = 125 o c - 2.3 - t rr diode reverse recovery time i es = 25a, di/dt = 200a/ s t c = 25 o c - 411 535 ns t c = 125 o c - 496 - i rr diode peak reverse recovery current t c = 25 o c - 5.2 6.8 a t c = 125 o c - 6.9 - q rr diode reverse recovery charge t c = 25 o c - 1.1 1.82 c t c = 125 o c - 1.7 -
FGH25N120FTDS 1200 v, 25 a field stop trench igbt ?2009 fairchild semiconductor corporation 4 www.fairchildsemi.com FGH25N120FTDS rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current leve l 0 2 4 6 8 0 30 60 90 120 150 180 17v 9v 20v t c = 25 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 8 0 30 60 90 120 150 180 9v 17v 20v t c = 125 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0 5 10 15 0 20 40 60 80 100 120 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 25a 50a i c = 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] 0 4 8 12 16 20 0 4 8 12 16 20 i c = 10a 25a 50a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGH25N120FTDS 1200 v, 25 a field stop trench igbt ?2009 fairchild semiconductor corporation 5 www.fairchildsemi.com FGH25N120FTDS rev. c0 gate resistance typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. load current v s. frequency figure 9. capacitance characteristics figure 10. gate charge cha racteristics figure 11. soa characteristics figure 12. turn-on characteristics vs. gate resistance 0 4 8 12 16 20 0 4 8 12 16 20 50a i c = 10a 25a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 1 10 0 2000 4000 6000 8000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 40 80 120 160 200 0 3 6 9 12 15 common emitter t c = 25 o c 600v 400v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 3000 0.01 0.1 1 10 100 200 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 0 10 20 30 40 50 10 100 200 common emitter v cc = 600v, v ge = 15v i c = 25a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ]
FGH25N120FTDS 1200 v, 25 a field stop trench igbt ?2009 fairchild semiconductor corporation 6 www.fairchildsemi.com FGH25N120FTDS rev. c0 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance coll ector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. gate re sistance collector current figure 17. switching loss vs. collector current figure 18. turn off switing soa characteristics 0 10 20 30 40 50 10 100 1000 common emitter v cc = 600v, v ge = 15v i c = 25a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 0 10 20 30 40 50 10 100 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 0 10 20 30 40 50 20 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 0 10 20 30 40 50 1 10 common emitter v cc = 600v, v ge = 15v i c = 25a t c = 25 o c t c = 125 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 0 10 20 30 40 50 0.1 1 10 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c e on e off switching loss [mj] collector current, i c [a] 1 10 100 1000 3000 1 10 100 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v]
FGH25N120FTDS 1200 v, 25 a field stop trench igbt ?2009 fairchild semiconductor corporation 7 www.fairchildsemi.com FGH25N120FTDS rev. c0 typical performance characteristics figure 19. forward characteristics figure 20. reverse recovery current figure 21. stored charge figure 22. re verse recovery time figure 23. transient thermal impedance of igbt 0 1 2 3 0.1 1 10 30 t j = 25 o c t c = 25 o c t c = 125 o c t j = 125 o c forward voltage, v f [v] forward current, i f [a] 10 20 30 40 50 2 3 4 5 6 7 200a/ ? s di/dt = 100a/ ? s reverse recovery currnet, i rr [a] forward current, i f [a] 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 200a/ ? s di/dt = 100a/ ? s stored recovery charge, q rr [ ? c ] forward current, i f [a] 10 20 30 40 400 600 800 1000 1200 200a/ ? s di/dt = 100a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 1e-5 0.0001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGH25N120FTDS 1200 v, 25 a field stop trench igbt ?2009 fairchild semiconductor corporation 8 www.fairchildsemi.com FGH25N120FTDS rev. c0 mechanical dimensions to-247a03
FGH25N120FTDS 1200 v, 25 a field stop trench igbt ?2009 fairchild semiconductor corporation 9 www.fairchildsemi.com FGH25N120FTDS rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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